Core level and valence band studies of layered Ti3SiC2 by high resolution photoelectron spectroscopy

Journal article

Peer reviewed

S. E Stoltz, H. I Stamberg, M. W Barsoum and Naturvetenskapliga fakulteten

The Journal of physics and chemistry of solids, v 64(12), pp 2321-2328

2003

Additional Links

Clean metal, semiconductor, and insulator surfaces

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Electron and ion emission by liquids and solids; impact phenomena

Electron density of states and band structure of crystalline solids

Electron states

Exact sciences and technology

Other inorganic compounds

Photoemission and photoelectron spectra

Physics

4 Record Views

21 citations in Scopus

Title: Core level and valence band studies of layered Ti3SiC2 by high resolution photoelectron spectroscopy
Creators: S. E Stoltz - Chalmers University of Technology
H. I Stamberg - Department of Physics, Göteborg University and Chalmers University of Technology, Göteborg 41296, Sweden
M. W Barsoum - Drexel University
Naturvetenskapliga fakulteten
Publication Details: The Journal of physics and chemistry of solids, v 64(12), pp 2321-2328
Publisher: Elsevier
Resource Type: Journal article
Language: English
Academic Unit: Materials Science and Engineering
Web of Science ID: WOS:000186575700003
Scopus ID: 2-s2.0-0142154087
Other Identifier: 991019167718504721

Data related to this publication, from InCites Benchmarking & Analytics tool:

Collaboration types: Domestic collaboration; International collaboration
Web of Science research areas: Chemistry, Multidisciplinary; Physics, Condensed Matter