Journal article
Cross‐sectional scanning tunneling spectroscopy of cleaved, silicon‐based metal–oxide–semiconductor junctions
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, v 14(3), pp 1607-1610
01 May 1996
Abstract
Cross‐sectional scanning tunneling spectroscopy experiments were performed under air‐ambient conditions on cleaved Si‐based metal–oxide–semiconductor (MOS) junctions. With the scanning tunneling microscope tip in the vicinity of the oxide–semiconductor interface, the electric field‐induced depletion region was found to pinch‐off the tunneling current similar to the effect in a MOS field‐effect transistor (MOSFET) where increasing gate bias reduces the channel current. In this study, the experimentally observed dependence of the tip‐semiconductor I‐V characteristics on the gate bias was interpreted within a transfer‐Hamiltonian tunneling model representing the tip‐semiconductor junction and including both tip‐induced band‐bending and gate bias effects.
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Details
- Title
- Cross‐sectional scanning tunneling spectroscopy of cleaved, silicon‐based metal–oxide–semiconductor junctions
- Creators
- Paul M. Thibado - University of PennsylvaniaT. W. Mercer - University of PennsylvaniaShelton Fu - University of PennsylvaniaTakeshi Egami - University of PennsylvaniaN. J. DiNardo - University of PennsylvaniaDawn A. Bonnell - University of Pennsylvania
- Publication Details
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, v 14(3), pp 1607-1610
- Number of pages
- 4
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Physics
- Web of Science ID
- WOS:A1996UU48000007
- Scopus ID
- 2-s2.0-0030142010
- Other Identifier
- 991021862381804721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Engineering, Electrical & Electronic
- Nanoscience & Nanotechnology
- Physics, Applied