Journal article
Current transport modeling in quantum-barrier-enhanced heterodimensional contacts
IEEE transactions on electron devices, v 50(12), pp 2573-2578
Dec 2003
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
A physical model for electron and hole current transport is formulated in a novel heterodimensional contact that incorporates a barrier-enhancement region between a two-dimensional optically active InGaAs/InAlAs quantum well and a three-dimensional metal contact. Developed for easy inclusion in fully self-consistent numerical device simulators, these quantum-mechanical-transmission boundary conditions are useful to investigate important carrier transport effects such as carrier accumulation and thermionic and tunneling emission in heterodimensional contacts, dc current simulations of the quantum-barrier-enhanced structure are compared with simulated currents in a structure with direct metal contact to the InGaAs quantum well. Results indicate a reduction in dark current of nearly three orders of magnitude, making these contact structures attractive for low-noise photodetector applications. Additionally, simulation of the transient current response of a photodetector with 1-/spl mu/m interdigitated contact spacing indicates an electrical bandwidth of 50 GHz.
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Details
- Title
- Current transport modeling in quantum-barrier-enhanced heterodimensional contacts
- Creators
- G.B Tait - Virginia Commonwealth UniversityB Nabet
- Publication Details
- IEEE transactions on electron devices, v 50(12), pp 2573-2578
- Publisher
- IEEE
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Web of Science ID
- WOS:000188004300035
- Scopus ID
- 2-s2.0-0346076861
- Other Identifier
- 991019169639504721
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- Collaboration types
- Domestic collaboration
- Web of Science research areas
- Engineering, Electrical & Electronic
- Physics, Applied