Defect state assisted tunneling in intermediate temperature molecular beam epitaxy grown GaAs

Journal article

Peer reviewed

A. E Youtz, B Nabet and F Castro

Journal of electronic materials, v 26(4), pp 372-375

1997

Additional Links

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Electron states

Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures

Electronic transport in interface structures

Exact sciences and technology

Iii-v semiconductors

Impurity and defect levels

Metal-semiconductor-metal structures

Physics

Tunneling

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1 citations in Scopus

Title: Defect state assisted tunneling in intermediate temperature molecular beam epitaxy grown GaAs
Creators: A. E Youtz - Drexel University
B Nabet - Drexel University
F Castro - Drexel University
Publication Details: Journal of electronic materials, v 26(4), pp 372-375
Publisher: Institute of Electrical and Electronics Engineers
Resource Type: Journal article
Language: English
Academic Unit: Electrical and Computer Engineering
Web of Science ID: WOS:A1997WU66700007
Scopus ID: 2-s2.0-0031117946
Other Identifier: 991019168236704721

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Web of Science research areas: Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Applied