Journal article
Defects in Quasi-One Dimensional Oxide Conductors: K0.3MoO3
MRS proceedings, v 375, pp 133-144
1994
Abstract
The electronic structure of the prototypical quasi-one dimensional (1D) conductor K03MoO3 has been studied using high resolution photoemission spectroscopy. In particular, the electronic structure of defects was investigated in order to understand the mechanism for charge density wave pinning and destruction of the Peierls transition. Defects were found to radically alter the electronic structure close to the Fermi level (EF), thus strongly modifying the structure of the Fermi surface. While a low emission intensity at EF has been interpreted as evidence for a Luttinger liquid ground state in a ID metal, we show that non-stoichiometric surfaces lead to similar effects. The nature of the ground state is discussed in the context of these results.
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Details
- Title
- Defects in Quasi-One Dimensional Oxide Conductors: K0.3MoO3
- Creators
- Kevin E. Smith - Boston UniversityKlaus Breuer - Boston UniversityDavid Goldberg - Boston UniversityMartha Greenblatt - Rutgers, The State University of New JerseyWilliam McCarroll - Rutgers, The State University of New JerseySteve L. Hulbert - Brookhaven National Laboratory
- Publication Details
- MRS proceedings, v 375, pp 133-144
- Publisher
- Cambridge University Press
- Number of pages
- 12
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Physics
- Other Identifier
- 991021906511304721