Journal article
Deposition and characterization of silicon dioxide thin films deposited by mercury‐arc‐source driven photon‐activated chemical‐vapor deposition
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, v 6(1), pp 470-472
Jan 1988
Abstract
Silicon dioxide thin films have been grown by the technique of photochemical‐vapor deposition. Deposition was performed using direct dissociation of oxygen by an ultraviolet arc lamp in the presence of silane. The films were deposited for a temperature range of 150 and 350 °C. Deposition rates peaked at a total pressure of 2 Torr, with a rate of 23 nm/min and 68 nm/min at 150 °C and 250 °C, respectively. Film stress is compressive with 1.04±0.14×109 dynes/cm2. Dielectric constant (εox) and breakdown voltage (V
B
) were measured as 3.6 and 3.2 MV/cm, respectively. Etch rate in a room temperature 1:5 buffered hydrofluoric acid:deionized water solution was below 50 Å/s. The films have promise for application in integrated circuit devices.
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Details
- Title
- Deposition and characterization of silicon dioxide thin films deposited by mercury‐arc‐source driven photon‐activated chemical‐vapor deposition
- Creators
- Kevin J. Scoles - Drexel UniversityAnderson H. Kim - Department of Electrical and Computer Engineering, Drexel University, Philadelphia, Pennsylvania 19104Mian‐Heng Jiang - Department of Electrical and Computer Engineering, Drexel University, Philadelphia, Pennsylvania 19104Brian C. Lee - RCA Microelectronic Center, Somerville, New Jersey 08876
- Publication Details
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, v 6(1), pp 470-472
- Number of pages
- 3
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Web of Science ID
- WOS:A1988M172300098
- Other Identifier
- 991019184288204721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Engineering, Electrical & Electronic
- Nanoscience & Nanotechnology
- Physics, Applied