Journal article
Dielectric/metal sidewall diffusion barrier for Cu/porous ultralow-k interconnect technology
Applied physics letters, v 84(13), pp 2442-2444
29 Mar 2004
Abstract
With the acknowledged insufficiency of traditional Ta or TaN barriers, deposited by physical vapor deposition (PVD), in the Cu/porous ultralow-k intermetal dielectric integration, an amorphous hydrogenated SiC (a-SiC:H.)/Ta bilayer sidewall diffusion barrier has been fabricated using 0.13 mum Cu/porous ultralow-k [Porous-SiLK (Proprietary product from Dow Chemical Corporation, USA), ksimilar to2.2] single damascene process. The electrical tests show that the line-to-line leakage current, and the electrical breakdown field (E-BD) of samples with this. a-SiC:H/Ta,dielectric/metal bilayer structure are significantly improved compared to the conventional PVD multi-stacked Ta(N) sidewall barrier. This improvement is mostly due to surface roughness modification after the deposition of a-SiC:H film, which, in addition to being a good barrier to Cu diffusion, can effectively "seal" the weak points on the surface of porous low-k material, that are responsible for the sidewall barrier failure. (C) 2004 American Institute of Physics.
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Details
- Title
- Dielectric/metal sidewall diffusion barrier for Cu/porous ultralow-k interconnect technology
- Creators
- Z ChenK PrasadC Y LiP W LuS S SuL J TangD GuiS BalakumarR ShuR Kumar
- Publication Details
- Applied physics letters, v 84(13), pp 2442-2444
- Publisher
- American Institute of Physics
- Number of pages
- 3
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Web of Science ID
- WOS:000220591500074
- Scopus ID
- 2-s2.0-11144356214
- Other Identifier
- 991019196423204721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Physics, Applied