Journal article
Dislocations and Stacking Faults in Ti3SiC2
Journal of the American Ceramic Society, v 81(6), pp 1677-1681
Jun 1998
Abstract
The ternary carbide Ti3SIC2 fabricated by a reactive hot-press route is investigated by transmission electron microscopy. The material consists mainly of large elongated grains with planar boundaries, and is characterized by a low defect density. Dislocations are observed in the grains and at grain boundaries. Perfect dislocations with b = 1/3<1120> lying in (0001) basal planes are present. These basal plane dislocations are mobile and multiply as a result of room-temperature deformation. All of the stacking faults observed lie in the basal planes.
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Details
- Title
- Dislocations and Stacking Faults in Ti3SiC2
- Creators
- Leonid Farber - Department of Materials Engineering, Drexel University, Philadelphia, Pennsylvania 19104Michel W. Barsoum - Drexel University, Materials Science and EngineeringAntonios Zavaliangos - Drexel University, Materials Science and EngineeringTamer El-Raghy - Department of Materials Engineering, Drexel University, Philadelphia, Pennsylvania 19104Igor Levin - Ceramics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-0001
- Publication Details
- Journal of the American Ceramic Society, v 81(6), pp 1677-1681
- Publisher
- American Ceramics Society
- Number of pages
- 5
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Web of Science ID
- WOS:000074277600036
- Scopus ID
- 2-s2.0-0032100032
- Other Identifier
- 991019170383904721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Collaboration types
- Domestic collaboration
- Web of Science research areas
- Materials Science, Ceramics