Journal article
Effect of defects on graphitization of SiC
Journal of materials research, v 28(7), pp 952-957
14 Apr 2013
Abstract
Epitaxial graphene and carbon nanotubes (CNTs) grown on SiC have shown big potential in electronics. The motivation to produce faster and smaller electronic devices using less power opened the way to a study of how to produce controlled epitaxial graphene and CNTs on SiC. Since defects are among the important tools to control the properties of materials, the effects of defects on the carbon formation on SiC have been analyzed. In this study, the effects of defects on the carbon formation on SiC have been analyzed. We produced carbon films on the surface of four different SiC materials (polycrystalline sintered SiC disks, single crystalline SiC wafers, SiC whiskers, and nanowhiskers) by chlorination and vacuum annealing with the goal to understand the effects of surface defects on the carbon structure and the SiC decomposition rate. We have shown that grain boundaries, dislocations, scratches, surface steps, and external surfaces may greatly enhance the reaction rate and affect the final structure of carbon derived from SiC.
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Details
- Title
- Effect of defects on graphitization of SiC
- Creators
- Göknur Cambaz Büke - Department of Materials Science and Engineering, Cankaya University, Ankara, TurkeyGleb Yushin - †School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332Vadym Mochalin - ‡Department of Materials Science and Engineering, A.J. Drexel Nanotechnology Institute, Philadelphia, Pennsylvania 19104Yury Gogotsi - ‡Department of Materials Science and Engineering, A.J. Drexel Nanotechnology Institute, Philadelphia, Pennsylvania 19104
- Publication Details
- Journal of materials research, v 28(7), pp 952-957
- Publisher
- Cambridge University Press; New York, USA
- Number of pages
- 6
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Web of Science ID
- WOS:000316917100007
- Scopus ID
- 2-s2.0-84875732438
- Other Identifier
- 991014878430804721
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- Collaboration types
- Domestic collaboration
- International collaboration
- Web of Science research areas
- Materials Science, Multidisciplinary