Journal article
Electrical resistivity of epitaxial titanium films
Thin solid films, v 13(1), pp 61-66
1972
Abstract
Single-crystal titanium films were prepared by vacuum deposition onto single-crystal mica substrates heated to 420°C. An electron-beam heated pending drop source was used at pressures below 4×10
-9 torr. The resistivities of the films were measured at 4.2° and 293°K. Resistivity ratios
ϱ
293
ϱ
4.2
varied from 33.3 to 68.3 for films ranging in thickness from 4000 to 13 900 Å. These values are higher than the resistivity ratio of the source material (17) and are apparently higher than any reported previously for titanium in either thin film or bulk form. The variation of film resistivity with thickness at the two temperatures is discussed in comparison with previous titanium film resistivity studies. In addition, the applicability of the Fuchs size effect theory is discussed.
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Details
- Title
- Electrical resistivity of epitaxial titanium films
- Creators
- G. Gould - University of ChileC. Grahman - University of ChileE. Grünbaum - University of ChileL. Moraga - University of ChileJ. Müller - University of ChileD.C. Larson - Drexel University
- Publication Details
- Thin solid films, v 13(1), pp 61-66
- Publisher
- Elsevier
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- [Retired Faculty]
- Web of Science ID
- WOS:A1972O067600012
- Scopus ID
- 2-s2.0-0015435911
- Other Identifier
- 991019174895304721