Journal article
Electronic and magnetotransport properties of ferromagnetic p -(In,Mn)As∕ n -InAs heterojunctions
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, v 23(4), pp 1769-1772
01 Jul 2005
Abstract
The electronic and magnetotransport properties of epitaxial
p
-(In,Mn)As∕
n
-InAs heterojunctions have been studied. The junctions were formed by depositing ferromagnetic (In,Mn)As films on InAs (100) substrates using metal-organic vapor phase epitaxy. The current-voltage characteristics of the junctions have been measured from 78 to 295 K. At temperatures below 150 K, ohmic current dominate transport at low bias, followed by defect-assisted tunneling current with increasing bias. At high forward bias, junction transport is dominated by diffusion current. The magnetoresistance of the junctions was measured as a function of forward bias and applied magnetic field. The magnitude and field dependence of the longitudinal magnetoresistance depend directly on the junction transport mechanism. Under high bias, a magnetoresistance of 15.7% at 78 K and 8% at 295 K in a 4400 Oe field was measured in an
In
0.96
Mn
0.04
As
∕InAs junction. At 78 K, the high bias magnetoresistance increases linearly with magnetic field from 1000 to 4600 Oe.
Metrics
Details
- Title
- Electronic and magnetotransport properties of ferromagnetic p -(In,Mn)As∕ n -InAs heterojunctions
- Creators
- S. J. May - Northwestern UniversityB. W. Wessels - Northwestern University
- Publication Details
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, v 23(4), pp 1769-1772
- Number of pages
- 4
- Grant note
- NSF
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Web of Science ID
- WOS:000231211500074
- Scopus ID
- 2-s2.0-31144464941
- Other Identifier
- 991021934114504721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Engineering, Electrical & Electronic
- Nanoscience & Nanotechnology
- Physics, Applied