Journal article
Electronic properties of Mn acceptors in (In,Mn)As grown by metalorganic vapor phase epitaxy
Physica. B, Condensed matter, v 340-342, pp 870-873
31 Dec 2003
Abstract
In this study, the nature of the Mn electronic level in (In,Mn)As was investigated. (In,Mn)As thin films were epitaxially deposited on GaAs (001) substrates using metalorganic vapor phase epitaxy. Electronic transport properties were determined from Hall effect measurements over a temperature range of 78–300K and all films were found to be p-type. Mn was found to act as a shallow acceptor with an activation energy ranging from 22 to 16meV as the hole concentration increased from 8.5×1017 to 1.7×1018cm−3. In heavily doped films, a large percentage of Mn is found to be electronically inactive and the hole concentrations are up to a factor of 103 times smaller than the Mn concentration.
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Details
- Title
- Electronic properties of Mn acceptors in (In,Mn)As grown by metalorganic vapor phase epitaxy
- Creators
- S.J MayA.J BlattnerB.W Wessels
- Publication Details
- Physica. B, Condensed matter, v 340-342, pp 870-873
- Publisher
- Elsevier
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Web of Science ID
- WOS:000188300200182
- Scopus ID
- 2-s2.0-0347764758
- Other Identifier
- 991014878079504721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Physics, Condensed Matter