Journal article
Electronic structures of HgTe and CdTe surfaces and HgTe/CdTe interfaces
Physical review. B, Condensed matter, v 40(11), pp 7825-7830
15 Oct 1989
PMID: 9991210
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
A Green's-function method has been used to study the surface and interface electronic structures of the II-VI compounds HgTe and CdTe. Localized surface and resonance states near the cation-terminated (100) surface of CdTe and the anion-terminated surface of HgTe have been found for the ideal surfaces. The energies and strengths of these surface states are altered by surface perturbations. The bulk states near the surface are drastically modified by the creation of the surface, but the band gaps remain unchanged. Numerical evaluation of the local densities of states at the Gamma and J points shows that, at the (100) interface of HgTe/CdTe, the previously observed surface states are no longer present. However, in the interface region, bulk states of one material penetrate some distance into the other material.
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Details
- Title
- Electronic structures of HgTe and CdTe surfaces and HgTe/CdTe interfaces
- Creators
- J. T. Schick - Drexel UniversityS. M. Bose - Drexel UniversityA.-B. Chen - Auburn University
- Publication Details
- Physical review. B, Condensed matter, v 40(11), pp 7825-7830
- Publisher
- Cold Spring Harbor Press
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- [Retired Faculty]
- Web of Science ID
- WOS:A1989AW11600043
- Scopus ID
- 2-s2.0-24544461362
- Other Identifier
- 991019174757504721
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InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Collaboration types
- Domestic collaboration
- Web of Science research areas
- Materials Science, Multidisciplinary
- Physics, Applied
- Physics, Condensed Matter