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Electronic structures of HgTe and CdTe surfaces and HgTe/CdTe interfaces
Journal article   Open access

Electronic structures of HgTe and CdTe surfaces and HgTe/CdTe interfaces

J. T. Schick, S. M. Bose and A.-B. Chen
Physical review. B, Condensed matter, v 40(11), pp 7825-7830
15 Oct 1989
PMID: 9991210
url
https://doi.org/10.1080/17454832.2017.1388263View
Published, Version of Record (VoR)CC BY-NC-ND V4.0 Open

Abstract

SOLID-STATE PHYSICS
A Green's-function method has been used to study the surface and interface electronic structures of the II-VI compounds HgTe and CdTe. Localized surface and resonance states near the cation-terminated (100) surface of CdTe and the anion-terminated surface of HgTe have been found for the ideal surfaces. The energies and strengths of these surface states are altered by surface perturbations. The bulk states near the surface are drastically modified by the creation of the surface, but the band gaps remain unchanged. Numerical evaluation of the local densities of states at the Gamma and J points shows that, at the (100) interface of HgTe/CdTe, the previously observed surface states are no longer present. However, in the interface region, bulk states of one material penetrate some distance into the other material.

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Collaboration types
Domestic collaboration
Web of Science research areas
Materials Science, Multidisciplinary
Physics, Applied
Physics, Condensed Matter
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