Electronic, thermal, and elastic properties of Ti 3 Si 1 − x Ge x C 2 solid solutions

Journal article

P. Finkel, B. Seaman, K. Harrell, J. Palma, J. D. Hettinger, S. E. Lofland, A. Ganguly, M. W. Barsoum, Z. Sun, Sa Li, …

Physical review. B, Condensed matter and materials physics, v 70(8)

Aug 2004

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Title: Electronic, thermal, and elastic properties of Ti 3 Si 1 − x Ge x C 2 solid solutions
Creators: P. Finkel - Rowan University
B. Seaman - Rowan University
K. Harrell - Rowan University
J. Palma - Rowan University
J. D. Hettinger - Rowan University
S. E. Lofland - Rowan University
A. Ganguly - Drexel University
M. W. Barsoum - Drexel University
Z. Sun - RWTH Aachen University
Sa Li - Uppsala University
R. Ahuja - Uppsala University
Publication Details: Physical review. B, Condensed matter and materials physics, v 70(8)
Publisher: Cold Spring Harbor Press
Resource Type: Journal article
Language: English
Academic Unit: Materials Science and Engineering; Mechanical Engineering and Mechanics
Web of Science ID: WOS:000223716700026
Scopus ID: 2-s2.0-20844437760
Other Identifier: 991019167970404721

Data related to this publication, from InCites Benchmarking & Analytics tool:

Collaboration types: Domestic collaboration; International collaboration
Web of Science research areas: Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter