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Electronic transport and conduction mechanism transition in La1/3Sr2/3FeO3 thin films
Journal article   Peer reviewed

Electronic transport and conduction mechanism transition in La1/3Sr2/3FeO3 thin films

R. C. Devlin, A. L. Krick, R. J. Sichel-Tissot, Y. J. Xie and S. J. May
Journal of applied physics, v 115(23)
21 Jun 2014
DOI: https://doi.org/10.1063/1.4883541

Abstract

Physical Sciences Physics Physics, Applied Science & Technology
We report on the electronic transport properties of epitaxial La1/3Sr2/3FeO3 films using temperature dependent resistivity, Hall effect, and magnetoresistance measurements. We show that the electronic phase transition, which occurs near 190 K, results in a change in conduction mechanism from nonadiabatic polaron transport at high temperatures to resistivity behavior following a power law temperature dependence at low temperatures. The phase transition is also accompanied by an abrupt increase in apparent mobility and Hall coefficient below the critical temperature (T*). We argue that the exotic low temperature transport properties are a consequence of the unusually long-range periodicity of the antiferromagnetic ordering, which also couples to the electronic transport in the form of a negative magnetoresistance below T* and a sign reversal of the Hall coefficient at T*. By comparing films of differing thicknesses, stoichiometry, and strain states, we demonstrate that the observed conduction behavior is a robust feature of La1/3Sr2/3FeO3. (C) 2014 AIP Publishing LLC.

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