Journal article
Evaluation of the performance of TaN diffusion barrier against copper diffusion using SIMS and AFM
Electronics letters, v 37(10), pp 660-661
10 May 2001
Abstract
The reliability of a multilayer ionised metal plasma (TMP) Cu/ LMP TaN plasma enhanced chemical vapour deposited SiO2/Si film structure with different thickness of TaN (10-30nm) is studied. AFM pictures of the surface morphology show roughening after annealing, indicating possible grain growth. SIMS shows abrupt broadening of the mixed regions at 600 degreesC for the 10nm thick TaN barrier and at 800 degreesC for the 30nm thick TaN barrier.
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Details
- Title
- Evaluation of the performance of TaN diffusion barrier against copper diffusion using SIMS and AFM
- Creators
- W H Teh - National University of SingaporeL T KohS M ChenJ XieC Y LiP D Foo
- Publication Details
- Electronics letters, v 37(10), pp 660-661
- Publisher
- Inst Engineering Technology-Iet
- Number of pages
- 2
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Web of Science ID
- WOS:000168899100036
- Scopus ID
- 2-s2.0-0035837233
- Other Identifier
- 991019196665404721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Collaboration types
- Domestic collaboration
- Web of Science research areas
- Engineering, Electrical & Electronic