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Evolution of strain in aluminum gallium nitride/gallium nitride high electron mobility transistors under on-state bias
Journal article   Open access   Peer reviewed

Evolution of strain in aluminum gallium nitride/gallium nitride high electron mobility transistors under on-state bias

H. Ghassemi, A. Lang, C. Johnson, R. Wang, B. Song, P. Phillips, Q. Qiao, R. F. Klie, H. G. Xing and M. L. Taheri
Journal of applied physics, v 114(6), p64507
14 Aug 2013
DOI: https://doi.org/10.1063/1.4818450
url
https://doi.org/10.1063/1.4818450View
Published, Version of Record (VoR)Maybe Open Access (Publisher Bronze),  Open

Abstract

Physical Sciences Physics Physics, Applied Science & Technology
On-state degradation of AlGaN/GaN high electron mobility transistors (HEMTs) was quantified as a function of defect generation and strain evolution using high-resolution transmission electron microscopy. Observation of devices under on-state stress conditions elucidated defect formation mechanisms, which is known to be caused by hot electrons. Geometric phase analysis indicated a similar to 25% decrease of the in-plane tensile strain in the AlGaN barrier after extended bias. Changes in sheet polarization charge density were estimated based on observations of the defect formation and resulting strain relaxation. We propose three regimes of degradation during HEMT device operation, and suggest the presence of a critical point at which defects become stable or permanent. (C) 2013 AIP Publishing LLC.

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Physics, Applied
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