Journal article
Experimental assessment of metal solvents for low-temperature liquid-phase epitaxy of silicon carbide
Journal of crystal growth, v 225(02-04), pp 322-329
May 2001
Abstract
The results of an experimental survey of metal solvents for low-temperature liquid-phase epitaxy (LPE) of SiC on 6H–SiC substrates is reported. The most promising solvents for low-temperature (900°C–1200°C) LPE include Ga, Sn, Ga/Sn, Ni, Cu, and Zn–Al. We were able to achieve continuous epitaxial layers of several microns thickness at growth temperatures of around 1000°C. In the case of Zn/Al solvents, the growth mechanism is attributed to supersaturation induced by solvent evaporation. Selective epitaxy on patterned, masked SiC substrates was also demonstrated.
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Details
- Title
- Experimental assessment of metal solvents for low-temperature liquid-phase epitaxy of silicon carbide
- Creators
- Michael G. Mauk - AstroPower, Inc., Solar Park, Newark, DE 19716-2000, USABryan W. Feyock - AstroPower, Inc., Solar Park, Newark, DE 19716-2000, USAArchana Sharma - University of DelawareRobert G. Hunsperger - University of Delaware
- Publication Details
- Journal of crystal growth, v 225(02-04), pp 322-329
- Publisher
- Elsevier
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Engineering Technology
- Scopus ID
- 2-s2.0-0035333389
- Other Identifier
- 991020623760004721