Journal article
Experimental study on close-in to microwave carrier phase noise of laser diode with external feedback
IEEE transactions on microwave theory and techniques, v 43(9), pp 2277-2283
01 Sep 1995
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Abstract
The residual phase noise at close-in to carrier offset frequency is studied for optical links using a laser diode with an external optical feedback. Since the measured FM noise degradation of the modulating signal was found to be insignificantly higher than the expected 20 log (n) in dB, the residual phase noise of the laser diode was measured to quantify the expected carrier signal FM noise floor level. The measured residual phase noise of an InGaAsP laser diode at 1 KHz offset carrier signal of 5.08 GHz is measured to be -100 and -90 dBc/Hz, with and without a 3-cm-long free-space external cavity, respectively. The close-in to carrier phase noise results of this laser at the external cavity resonance frequency of about 5 GHz is explained for the first time in terms of laser diode nonlinearity and FM noise theory of injection locked microwave oscillators. A good match between the predicted and measured results was observed. (Author)
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Details
- Title
- Experimental study on close-in to microwave carrier phase noise of laser diode with external feedback
- Creators
- Tsang-Der Ni - Drexel UniversityXiangdong Zhang - Drexel UniversityAfshin Daryoush - Drexel University
- Publication Details
- IEEE transactions on microwave theory and techniques, v 43(9), pp 2277-2283
- Publisher
- The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Web of Science ID
- WOS:A1995RU47900014
- Scopus ID
- 2-s2.0-0029376316
- Other Identifier
- 991019173689304721
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- Web of Science research areas
- Engineering, Electrical & Electronic