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Fabrication and electrical and thermal properties of Ti 2InC, Hf 2InC and (Ti,Hf) 2InC
Journal article   Peer reviewed

Fabrication and electrical and thermal properties of Ti 2InC, Hf 2InC and (Ti,Hf) 2InC

M.W. Barsoum, J. Golczewski, H.J. Seifert and F. Aldinger
Journal of alloys and compounds, v 340(1), pp 173-179
2002

Abstract

Crystal structure Electrical transport Intermetallics Synthesis X-ray diffraction
In this paper we report on the characterization of predominantly single phase, fully dense Ti 2InC (Ti 1.96InC 1.15), Hf 2InC (Hf 1.94InC 1.26) and (Ti,Hf) 2InC ((Ti 0.47,Hf 0.56) 2InC 1.26) samples produced by reactive hot isostatic pressing of the elemental powders. The a and c lattice parameters in nm, were, respectively: 0.3134; 1.4077 for Ti 2InC; 0.322, 1.443 for (Ti,Hf) 2InC; and 0.331 and 1.472 for Hf 2InC. The heat capacities, thermal expansion coefficients, thermal and electrical conductivities were measured as a function of temperature. These ternaries are good electrical conductors with a resistivity that increases linearly with increasing temperatures. At 0.28 μΩ m, the room temperature resistivity of (Ti,Hf) 2InC is higher than the end members (∼0.2 μΩ m), indicating a solid solution scattering effect. In the 300 to 1273 K temperature range the thermal expansion coefficients are: 7.6×10 −6 K −1 for Hf 2InC, 9.5×10 −6 K −1 for Ti 2InC, and 8.6×10 −6 K −1 for (Ti,Hf) 2InC. They are all good conductors of heat (20 to 26 W/m K) with the electronic component of conductivity dominating at all temperatures. Extended exposure of Ti 2InC to vacuum (∼10 −4 atm) at ∼800 °C, results in the selective sublimation of In, and the conversion of Ti 2InC to TiC x .

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Domestic collaboration
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Chemistry, Physical
Materials Science, Multidisciplinary
Metallurgy & Metallurgical Engineering
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