Journal article
Frequency response mechanisms for the GaAs MSM photodetector and electron detector
IEEE transactions on microwave theory and techniques, v 49(10), pp 1900-1907
Oct 2001
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Abstract
The GaAs metal-semiconductor-metal (MSM) device is a very useful planar and monolithic-microwave integrated-circuit compatible photodetector and electron-detector. As a photodetector, the MSM has been used for many applications in the past, however, in this paper we demonstrate its usefulness as an electron-beam detector as well. We present here a comprehensive analysis of the primary detection mechanism (electric field enhanced collection of generated electrons) as well as a newly identified secondary mechanism. This new mechanism is characterized by a high detection gain, but low speed. Experimental results are presented to verify the analysis, and possible applications are suggested by utilizing each one of the two detection mechanisms.
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Details
- Title
- Frequency response mechanisms for the GaAs MSM photodetector and electron detector
- Creators
- T.A Yost - Drexel UniversityA MadjarP.R Herczfeld
- Publication Details
- IEEE transactions on microwave theory and techniques, v 49(10), pp 1900-1907
- Publisher
- IEEE
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- [Retired Faculty]
- Web of Science ID
- WOS:000171460600011
- Scopus ID
- 2-s2.0-0035474994
- Other Identifier
- 991019173831404721
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- Web of Science research areas
- Engineering, Electrical & Electronic