Journal article
Gate-Induced Carrier De localization in Quantum Dot Field Effect Transistors
Nano letters, v 14(10), pp 5948-5952
01 Oct 2014
PMID: 25171186
Abstract
We study gate-controlled, low-temperature resistance and magnetotransport in indium-doped CdSe quantum dot field effect transistors. We show that using the gate to accumulate electrons in the quantum dot channel increases the localization product (localization length times dielectric constant) describing transport at the Fermi level, as expected for Fermi level changes near a mobility edge. Our measurements suggest that the localization length increases to significantly greater than the quantum dot diameter.
Metrics
Details
- Title
- Gate-Induced Carrier De localization in Quantum Dot Field Effect Transistors
- Creators
- Michael E. Turk - University of PennsylvaniaJi-Hyuk Choi - Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USASoong Ju Oh - University of PennsylvaniaAaron T. Fafarman - University of PennsylvaniaBenjamin T. Diroll - University of PennsylvaniaChristopher B. Murray - University of PennsylvaniaCherie R. Kagan - University of PennsylvaniaJames M. Kikkawa - University of Pennsylvania
- Publication Details
- Nano letters, v 14(10), pp 5948-5952
- Publisher
- American Chemical Society; Washington, DC
- Number of pages
- 5
- Grant note
- DE-SC0002158 / U.S. Department of Energy Office of Basic Energy Sciences, Division of Materials Science and Engineering; United States Department of Energy (DOE)
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Chemical and Biological Engineering
- Web of Science ID
- WOS:000343016400071
- Scopus ID
- 2-s2.0-84907881695
- Other Identifier
- 991020834713804721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Chemistry, Multidisciplinary
- Chemistry, Physical
- Materials Science, Multidisciplinary
- Nanoscience & Nanotechnology
- Physics, Applied
- Physics, Condensed Matter