Journal article
Gate controlled 2-DEG varactor for VCO applications in microwave circuits
Microelectronics Journal, v 33(5), pp 495-500
2002
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
A novel gate controlled Schottky diode varactor is introduced. The three-terminal varactor is a modulation-doped heterostructure of AlGaAs/GaAs with two Schottky contacts, similar to a metal–semiconductor–metal (MSM) diode. Schottky metal contacts are made to a two-dimensional electron gas (2-DEG). The third contact, the gate contact is formed from highly doped n
+ GaAs material to allow an open optical window that can be used for optical gating and mixing. Structure capacitance is less than 1
PF and a change of more than 30% from the zero bias capacitance is observed with the applied gate voltage. On the basis of our quasi two-dimensional
C–
V model, the layer structure and device dimensions can be optimized and scaled to cover a wide range of operations in the microwave and millimeter wave regimes.
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Details
- Title
- Gate controlled 2-DEG varactor for VCO applications in microwave circuits
- Creators
- A. Anwar - Drexel UniversityB. Nabet - Drexel UniversityR. Ragi - Universidade de São PauloJ.E. Manzoli - National Nuclear Energy CommissionM.A. Romero - Universidade de São Paulo
- Publication Details
- Microelectronics Journal, v 33(5), pp 495-500
- Publisher
- Elsevier
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Electrical and Computer Engineering
- Web of Science ID
- WOS:000175704100014
- Scopus ID
- 2-s2.0-0037029753
- Other Identifier
- 991019169661904721
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- Collaboration types
- Domestic collaboration
- International collaboration
- Web of Science research areas
- Engineering, Electrical & Electronic
- Nanoscience & Nanotechnology