Logo image
Back
Graphene-lead zirconate titanate optothermal field effect transistors
Journal article   Open access   Peer reviewed

Graphene-lead zirconate titanate optothermal field effect transistors

Chun-Yi Hsieh, Yung-Ting Chen, Wei-Jyun Tan, Yang-Fang Chen, Wan Y. Shih and Wei-Heng Shih
Applied physics letters, v 100(11), pp 113507-113507-4
12 Mar 2012
DOI: https://doi.org/10.1063/1.3693607
url
https://doi.org/10.1063/1.3693607View
Published, Version of Record (VoR)Maybe Open Access (Publisher Bronze),  Open

Abstract

Physical Sciences Physics Physics, Applied Science & Technology
We have developed a pyroelectric field effect transistor (FET) based on a graphene-lead zirconate titanate (PZT) system. Under the incidence of a laser beam, the drain current can be increased or decreased depending on the direction of the polarization of the PZT substrate. The drain current sensitivity of the optothermal FET can reach up to 360 nA/mW at a drain field of 6.7 kV/m more than 5 orders of magnitude higher than that of the photogating transistors based on carbon nanotube on SiO2/Si substrate. Graphene is an excellent component for pyroelectric FET due to its high optical transparency and conductance. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3693607]

Metrics

9 Record Views
30 citations in Web of Science
33 citations in Scopus

Details

InCites Highlights

Data related to this publication, from InCites Benchmarking & Analytics tool:

Collaboration types
Domestic collaboration
International collaboration
Web of Science research areas
Physics, Applied
Logo image