Journal article
HETEROJUNCTIONS OF SOLID C70 AND CRYSTALLINE SILICON - RECTIFYING PROPERTIES AND BARRIER HEIGHTS
Applied physics letters, v 67(12), pp 1683-1685
18 Sep 1995
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Abstract
Heterojunctions of solid C70 and n- or p-type crystalline Si have been made. Current-voltage measurements show that both C70/n-Si and C70/p-Si contacts are rectifying but their directions of rectification are opposite to each other. Thermal activation measurements at a fixed forward bias show an exponential dependence of current on the reciprocal of temperature, from which we determine the effective barrier height as 0.23 eV for C70/n-Si and 0.27 eV for C70/p-Si. Relative dielectric constant of solid C70 was determined to be 4.96 through the study of high-frequency capacitance-voltage characteristics for Ti/C70/p-Si structures. (C) 1995 American Institute of Physics.
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Details
- Title
- HETEROJUNCTIONS OF SOLID C70 AND CRYSTALLINE SILICON - RECTIFYING PROPERTIES AND BARRIER HEIGHTS
- Creators
- K M ChenK WUY ChenY Q JiaS X JinC Y LIZ N GUX H Zhou
- Publication Details
- Applied physics letters, v 67(12), pp 1683-1685
- Publisher
- American Institute of Physics
- Number of pages
- 3
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Web of Science ID
- WOS:A1995RV18000016
- Scopus ID
- 2-s2.0-0009403504
- Other Identifier
- 991019196415904721
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- Web of Science research areas
- Physics, Applied