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High-Speed, High-Sensitivity Optoelectronic Device with Bilayer Electron and Hole Charge Plasma
Journal article   Open access

High-Speed, High-Sensitivity Optoelectronic Device with Bilayer Electron and Hole Charge Plasma

Bahram Nabet, Marc Currie, Pouya Dianat, Fabio Quaranta and Adriano Cola
ACS photonics, v 1(7), pp 560-569
01 Jul 2014
url
https://doi.org/10.1021/ph4001229View
Published, Version of Record (VoR)Open Access (Publisher-Specific) Open

Abstract

Materials Science Materials Science, Multidisciplinary Nanoscience & Nanotechnology Optics Physical Sciences Physics Physics, Applied Physics, Condensed Matter Science & Technology Science & Technology - Other Topics Technology
Analogous to a drop exciting a wave in a reservoir that is detected more rapidly than the drop's transport by current flow, charge plasma confined in a semiconductor can transfer energy, hence respond much faster than the electric field-induced carrier drift current. Here we construct an optoelectronic device in which charge reservoirs respond to excitation with a speed that is impossible to achieve by transport of charge. In response to short optical pulses, this device produces electrical pulses that are almost 2 orders of magnitude shorter than the same device without the charge reservoirs. In addition to speed, the sensitivity of this process allowed us to measure, at room temperature, as low as 11 000 photons. These micro plasma devices can have a range of application such as optical communication with a fraction of a microwatt power compared to the present tens of milliwatts, ultrasensitive light detection with cryogenic cooling, photovoltaic devices capable of harvesting dim light, THz radiation detectors, and charged particle detectors.

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Collaboration types
Domestic collaboration
International collaboration
Web of Science research areas
Materials Science, Multidisciplinary
Nanoscience & Nanotechnology
Optics
Physics, Applied
Physics, Condensed Matter
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