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High Velocity, Low‐Voltage Collective In‐Plane Switching in (100) BaTiO3 Thin Films
Journal article   Open access   Peer reviewed

High Velocity, Low‐Voltage Collective In‐Plane Switching in (100) BaTiO3 Thin Films

Trygve M. Ræder, Shuyu Qin, Michael J. Zachman, Rama K. Vasudevan, Tor Grande and Joshua C. Agar
Advanced science, v 9(29), pp e2201530-n/a
14 Oct 2022
DOI: https://doi.org/10.1002/advs.202201530
Featured in Collection :   UN Sustainable Development Goals @ Drexel
url
https://doi.org/10.1002/advs.202201530View
Published, Version of Record (VoR)Open Access (License Unspecified),  Open

Abstract

barium titanate capacitive hysteresis ferroelectric switching ferroelectrics neural network piezoresponse force microscopy
Ferroelectrics are being increasingly called upon for electronic devices in extreme environments. Device performance and energy efficiency is highly correlated to clock frequency, operational voltage, and resistive loss. To increase performance it is common to engineer ferroelectric domain structure with highly‐correlated electrical and elastic coupling that elicit fast and efficient collective switching. Designing domain structures with advantageous properties is difficult because the mechanisms involved in collective switching are poorly understood and difficult to investigate. Collective switching is a hierarchical process where the nano‐ and mesoscale responses control the macroscopic properties. Using chemical solution synthesis, epitaxially nearly‐relaxed (100) BaTiO3 films are synthesized. Thermal strain induces a strongly‐correlated domain structure with alternating domains of polarization along the [010] and [001] in‐plane axes and 90° domain walls along the [011] or [011¯$\bar{1}$] directions. Simultaneous capacitance–voltage measurements and band‐excitation piezoresponse force microscopy revealed strong collective switching behavior. Using a deep convolutional autoencoder, hierarchical switching is automatically tracked and the switching pathway is identified. The collective switching velocities are calculated to be ≈500 cm s−1 at 5 V (7 kV cm−1), orders‐of‐magnitude faster than expected. These combinations of properties are promising for high‐speed tunable dielectrics and low‐voltage ferroelectric memories and logic. Here, a technique for simultaneous capacitance–voltage measurements and band‐excitation piezoresponse force microscopy is introduced. In epitaxially nearly‐relaxed (100) BaTiO3 films, strongly‐correlated domain structure are observed using a deep convolutional autoencoder and hierarchical switching is automatically tracked. Fast collective switching velocities (500 cm s−1 at 7kV cm−1), significantly faster than expected in a strongly clamped film, are observed.

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5 citations in Web of Science
4 citations in Scopus

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UN Sustainable Development Goals (SDGs)

This publication has contributed to the advancement of the following goals:

#7 Affordable and Clean Energy

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Collaboration types
Domestic collaboration
International collaboration
Web of Science research areas
Chemistry, Multidisciplinary
Materials Science, Multidisciplinary
Nanoscience & Nanotechnology
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