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High electrical conductivity and breakdown current density of individual monolayer Ti3C2Tx MXene flakes
Journal article   Open access   Peer reviewed

High electrical conductivity and breakdown current density of individual monolayer Ti3C2Tx MXene flakes

Alexey Lipatov, Adam Goad, Michael J Loes, Nataliia S Vorobeva, Jehad Abourahma, Yury Gogotsi and Alexander Sinitskii
Matter, v 4(4), pp 1413-1427
07 Apr 2021
url
https://doi.org/10.1016/j.matt.2021.01.021View
Published, Version of Record (VoR)Open Access (Publisher-Specific) Open

Abstract

monolayer electronic properties current annealing MXene Ti3C2Tx breakdown current density titanium carbide field-effect transistor current-carrying capacity
As the scaling down of integrated circuits continues, there is a growing interest in electrically conductive materials with high current-carrying capacity for next-generation on-chip interconnects. Here, we report very high breakdown current density in Ti3C2Tx MXene, an emerging two-dimensional material. We performed electrical measurements of individual high-quality monolayer Ti3C2Tx flakes, which were prepared by an improved synthesis method, and found that they exhibit electrical conductivities of up to 11,000 S cm−1 and field-effect electron mobilities of up to 6 cm2 V−1 s−1, both representing the best values reported for Ti3C2Tx flakes so far. All flakes exhibited very similar breakdown current densities of about 1.2 × 108 A cm−2, which are comparable with the best two-dimensional materials, including graphene. The remarkable combination of high electrical conductivity and high current-carrying capacity makes Ti3C2Tx promising for nanometer-thin interconnects and warrants investigation of breakdown current densities of other materials from the large MXene family. [Display omitted] •Improved electrical conductivity of monolayer Ti3C2Tx MXene of up to 11,000 S cm−1•Improved mobility of monolayer Ti3C2Tx MXene of up to 6 cm2 V−1 s−1•High breakdown current density of monolayer Ti3C2Tx MXene of 1.2 × 108 A cm−2•Current annealing of Ti3C2Tx devices yields better electronic characteristics In recent years, the increasing demand for higher performance of integrated circuits has been met by scaling down various device components, including on-chip interconnects. However, as the use of conventional metals, such as copper, in miniaturized interconnects becomes increasingly challenging, there is a growing interest in alternative interconnect materials with high electrical conductivity and breakdown current density. Here, we demonstrate a very high breakdown current density in monolayer Ti3C2Tx, a material from the family of two-dimensional transition metal carbides known as MXenes, which exceeds such properties of copper and other conventional metals. The remarkable combination of high electrical conductivity and breakdown current density found in Ti3C2Tx extends the already impressive list of potential applications of MXenes to microelectronics and warrants investigation of other materials from the large MXene family, some of which may possess even better characteristics. As the scaling down of integrated circuits continues, there is a growing interest in electrically conductive materials with high current-carrying capacity for the next generation of on-chip interconnects. Here, we report that monolayer Ti3C2Tx MXene, an emerging two-dimensional material, has a high breakdown current density of 1.2 × 108 A cm−2, which exceeds such properties of copper and other conventional metals. The remarkable combination of high electrical conductivity and high current-carrying capacity makes Ti3C2Tx promising for interconnect applications.

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Collaboration types
Domestic collaboration
Web of Science research areas
Materials Science, Multidisciplinary
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