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Journal article
High‐Speed Ionic Synaptic Memory Based on 2D Titanium Carbide MXene
Advanced functional materials, v 32(12), 2109970
16 Mar 2022
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
Synaptic devices with linear high‐speed switching can accelerate learning in artificial neural networks (ANNs) embodied in hardware. Conventional resistive memories however suffer from high write noise and asymmetric conductance tuning, preventing parallel programming of ANN arrays. Electrochemical random‐access memories (ECRAMs), where resistive switching occurs by ion insertion into a redox‐active channel, aim to address these challenges due to their linear switching and low noise. ECRAMs using 2D materials and metal oxides however suffer from slow ion kinetics, whereas organic ECRAMs enable high‐speed operation but face challenges toward on‐chip integration due to poor temperature stability of polymers. Here, ECRAMs using 2D titanium carbide (Ti3C2Tx) MXene that combine the high speed of organics and the integration compatibility of inorganic materials in a single high‐performance device are demonstrated. These ECRAMs combine the speed, linearity, write noise, switching energy, and endurance metrics essential for parallel acceleration of ANNs, and importantly, they are stable after heat treatment needed for back‐end‐of‐line integration with Si electronics. The high speed and performance of these ECRAMs introduces MXenes, a large family of 2D carbides and nitrides with more than 30 stoichiometric compositions synthesized to date, as promising candidates for devices operating at the nexus of electrochemistry and electronics.
Electrochemical random‐access memories using multilayered 2D titanium carbide MXene that combine the speed, linearity, write noise, switching energy, and endurance metrics essential for parallel acceleration of artificial neural networks with near ideal numerical accuracy in image recognition simulations are reported. The multilayered 2D MXene films are also stable after heat treatment needed for back‐end‐of‐line integration with Si electronics.
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Details
- Title
- High‐Speed Ionic Synaptic Memory Based on 2D Titanium Carbide MXene
- Creators
- Armantas Melianas - Stanford UniversityMin‐A Kang - KTH Royal Institute of TechnologyArmin VahidMohammadi - Drexel UniversityTyler James Quill - Stanford UniversityWeiqian Tian - Royal Institute of TechnologyYury Gogotsi - Drexel UniversityAlberto Salleo - Stanford UniversityMahiar Max Hamedi - Royal Institute of Technology
- Publication Details
- Advanced functional materials, v 32(12), 2109970
- Publisher
- Wiley
- Number of pages
- 9
- Grant note
- Semiconductor Research Corporation (2966.012) National Science Foundation (DGE‐1656518) FIRST Energy Frontier Research Center
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Web of Science ID
- WOS:000720741200001
- Scopus ID
- 2-s2.0-85119507500
- Other Identifier
- 991019167458304721
UN Sustainable Development Goals (SDGs)
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- Collaboration types
- Domestic collaboration
- International collaboration
- Web of Science research areas
- Chemistry, Multidisciplinary
- Chemistry, Physical
- Materials Science, Multidisciplinary
- Nanoscience & Nanotechnology
- Physics, Applied
- Physics, Condensed Matter