Journal article
Homoepitaxial growth of Ti–Si–C MAX-phase thin films on bulk Ti 3SiC 2 substrates
Journal of crystal growth, v 304(1)
2007
Abstract
Ti
3SiC
2 films were grown on polycrystalline Ti
3SiC
2 bulk substrates using DC magnetron sputtering. The crystallographic orientation of the film grains is shown to be determined by the respective substrate-grain orientation through homoepitaxial MAX-phase growth. For a film composition close to Ti:Si:C=3:1:2, the films predominantly consist of MAX phases, both Ti
3SiC
2 and the metastable Ti
4SiC
3. Lower Si content resulted in growth of TiC with Ti
3SiC
2 as a minority phase. Thus, MAX-phase heterostructures with preferred crystallographic relationships can also be realized.
Metrics
Details
- Title
- Homoepitaxial growth of Ti–Si–C MAX-phase thin films on bulk Ti 3SiC 2 substrates
- Creators
- P. Eklund - Linköping UniversityA. Murugaiah - Drexel UniversityJ. Emmerlich - Linköping UniversityZs Czigàny - Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest, HungaryJ. Frodelius - Linköping UniversityM.W. Barsoum - Drexel UniversityH. Högberg - Linköping UniversityL. Hultman - Linköping University
- Publication Details
- Journal of crystal growth, v 304(1)
- Publisher
- Elsevier
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Materials Science and Engineering
- Web of Science ID
- WOS:000247231900044
- Scopus ID
- 2-s2.0-34247620270
- Other Identifier
- 991019168691304721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Collaboration types
- Domestic collaboration
- International collaboration
- Web of Science research areas
- Crystallography
- Materials Science, Multidisciplinary
- Physics, Applied