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I-2 basal stacking fault as a degradation mechanism in reverse gate-biased AlGaN/GaN HEMTs
Journal article   Open access   Peer reviewed

I-2 basal stacking fault as a degradation mechanism in reverse gate-biased AlGaN/GaN HEMTs

A. C. Lang, J. L. Hart, J. G. Wen, D. J. Miller, D. J. Meyer and M. L. Taheri
Applied physics letters, v 109(13), p133509
26 Sep 2016
DOI: https://doi.org/10.1063/1.4963156
url
https://doi.org/10.1063/1.4963156View
Accepted (AM)Open Access (Publisher-Specific),  Open

Abstract

Physical Sciences Physics Physics, Applied Science & Technology
Here, we present the observation of a bias-induced, degradation-enhancing defect process in plasma-assisted molecular beam epitaxy grown reverse gate-biased AlGaN/GaN high electron mobility transistors (HEMTs), which is compatible with the current theoretical framework of HEMT degradation. Specifically, we utilize both conventional transmission electron microscopy and aberration-corrected transmission electron microscopy to analyze microstructural changes in not only high strained regions in degraded AlGaN/GaN HEMTs but also the extended gate-drain access region. We find a complex defect structure containing an I-2 basal stacking fault and offer a potential mechanism for device degradation based on this defect structure. This work supports the reality of multiple failure mechanisms during device operation and identifies a defect potentially involved with device degradation. Published by AIP Publishing.

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Domestic collaboration
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Physics, Applied
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