In-Situ Characterization of the Evolution of Defects in AlGaN\GaN HEMTs in the On-state and Off-state condition

A. Lang; H. Ghassemi; D. Meyer; M. L. Taheri

doi:10.1017/S1431927614009866

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$In-Situ Characterization of the Evolution of Defects in AlGaN\GaN HEMTs in the On-state and Off-state condition$

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In-Situ Characterization of the Evolution of Defects in AlGaN\GaN HEMTs in the On-state and Off-state condition

A. Lang, H. Ghassemi, D. Meyer and M. L. Taheri

Microscopy and microanalysis, v 20(S3), pp 1626-1627

Aug 2014

DOI: https://doi.org/10.1017/S1431927614009866

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Advances in In-situ Microscopy

Physical Sciences Symposia

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Title: In-Situ Characterization of the Evolution of Defects in AlGaN\GaN HEMTs in the On-state and Off-state condition
Creators: A. Lang - Department of Materials Science and Engineering, Drexel University, Philadelphia, PA, 19140
H. Ghassemi - Drexel University
D. Meyer - U.S. Naval Research Laboratory, Washington, DC 20375
M. L. Taheri - Drexel University
Publication Details: Microscopy and microanalysis, v 20(S3), pp 1626-1627
Publisher: Cambridge University Press
Number of pages: 2
Resource Type: Journal article
Language: English
Scopus ID: 2-s2.0-84927940022
Other Identifier: 991019335242104721

In-Situ Characterization of the Evolution of Defects in AlGaN\GaN HEMTs in the On-state and Off-state condition

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