Journal article
In Situ Repair of High-Performance, Flexible Nanocrystal Electronics for Large-Area Fabrication and Operation in Air
ACS nano, v 7(9), pp 8275-8283
24 Sep 2013
PMID: 23952742
Abstract
Colloidal semiconductor nanoaystal (NC) thin films have been integrated in light-emitting diodes, solar cells, field-effect transistors (FETs), and flexible, electronic circuits. However, NC devices are typically fabricated and operated in an inert environment since the reactive surface and high surface-to-volume ratio of NC materials render them sensitive to oxygen, water, and many solvents. This sensitivity has limited device scaling and large-scale device integration achievable by conventional fabrication technologies, which generally require ambient air and wet-chemical processing. Here, we present a simple, effective route to reverse the detrimental effects of chemical and environmental exposure, by incorporating, in situ, a chemical agent, namely, indium metal, which is thermally triggered to diffuse and repair the damage. Taking advantage of the recovery process, CdSe NC FETs are processed in air, patterned using the solvents of lithography, and packaged by atomic layer deposition to form large-area and flexible high-performance NC devices that operate stably in air.
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Details
- Title
- In Situ Repair of High-Performance, Flexible Nanocrystal Electronics for Large-Area Fabrication and Operation in Air
- Creators
- Ji-Hyuk Choi - Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USASoong Ju Oh - Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USAYuming Lai - Univ Penn, Dept Elect & Syst Engn, Philadelphia, PA 19104 USADavid K. Kim - Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USATianshuo Zhao - Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USAAaron T. Fafarman - Univ Penn, Dept Elect & Syst Engn, Philadelphia, PA 19104 USABenjamin T. Diroll - Univ Penn, Dept Chem, Philadelphia, PA 19104 USAChristopher B. Murray - Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USACherie R. Kagan - Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
- Publication Details
- ACS nano, v 7(9), pp 8275-8283
- Publisher
- American Chemical Society; Washington, DC
- Number of pages
- 9
- Grant note
- CBET-0854226 / NSF-CBET; National Science Foundation (NSF) DMR11-20901 / NSF MRSEC; National Science Foundation (NSF); NSF - Directorate for Mathematical & Physical Sciences (MPS) IBM; International Business Machines (IBM) 0935165 / Direct For Mathematical & Physical Scien; National Science Foundation (NSF); NSF - Directorate for Mathematical & Physical Sciences (MPS) DMS-0935165 / NSF; National Science Foundation (NSF) DE-SC0002158 / U.S. Department of Energy Office of Basic Energy Sciences, Division of Materials Science and Engineering; United States Department of Energy (DOE) Richard Perry University
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Chemical and Biological Engineering
- Web of Science ID
- WOS:000330016900091
- Scopus ID
- 2-s2.0-84884932798
- Other Identifier
- 991020834713304721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Collaboration types
- Domestic collaboration
- Web of Science research areas
- Chemistry, Multidisciplinary
- Chemistry, Physical
- Materials Science, Multidisciplinary
- Nanoscience & Nanotechnology