In-Situ TEM Observation of Physical Degradation of AlGaN/GaN Devices under Applied Electric Field

Journal article

Peer reviewed

H. Ghassemi, A. Lang and M. Taheri

Microscopy and microanalysis, v 18(S2), pp 1872-1873

Jul 2012

PMID: 23191881

Additional Links

Microscopy and Analysis of Quantum Structures and Devices-07

Physical Science Symposium

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

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3 citations in Scopus

Title: In-Situ TEM Observation of Physical Degradation of AlGaN/GaN Devices under Applied Electric Field
Creators: H. Ghassemi - Drexel University
A. Lang - Drexel University
M. Taheri - Drexel University
Publication Details: Microscopy and microanalysis, v 18(S2), pp 1872-1873
Publisher: Cambridge University Press
Number of pages: 2
Resource Type: Journal article
Language: English
Scopus ID: 2-s2.0-85007953458
Other Identifier: 991019335235004721