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In situ synchrotron x-ray studies of epitaxial SrCoO x films during ionic liquid gating
Journal article   Open access   Peer reviewed

In situ synchrotron x-ray studies of epitaxial SrCoO x films during ionic liquid gating

Yan Li, Jill K. Wenderott, Tadesse Billo, Maoyu Wang, Alvin Chang, Hui Cao, Xi Yan, D. Bruce Buchholz, Zhenxing Feng, Hua Zhou, …
APL materials, v 13(6), 061106
01 Jun 2025
url
https://doi.org/10.1063/5.0269796View
Published, Version of Record (VoR) Open

Abstract

Materials Science Materials Science, Multidisciplinary Nanoscience & Nanotechnology Physical Sciences Physics Physics, Applied Science & Technology Science & Technology - Other Topics Technology
The manipulation of ions in complex oxide materials can be used to mimic brain-like plasticity through changes to the resistivity of a neuromorphic device. Advances in the design of more energy efficient devices require improved understanding of how ions migrate within a material and across its interface. We investigate the exchange of oxygen and hydrogen in a model SrCoOx epitaxial film-a material that transitions between a ferromagnetic metal and antiferromagnetic insulator depending on the oxygen concentration. Changes to the film during ionic liquid gating were measured by in situ synchrotron x-ray techniques as a function of time and gate voltage, examining the reversibility of the oxide over one complete gating cycle. We find that the out-of-plane lattice constant and oxygen vacancy concentration of SrCoOx are largely reversible although changes were observed in the ordered vacancy structure. Our results provide much needed insight into electrolyte-gated phase behavior in the transition metal oxides.

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Collaboration types
Domestic collaboration
Web of Science research areas
Materials Science, Multidisciplinary
Nanoscience & Nanotechnology
Physics, Applied
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