Journal article
Influence of PECVD Deposition Power and Pressure on Phosphorus-Doped Polysilicon Passivating Contacts
IEEE journal of photovoltaics, v 10(5), pp 1239-1245
Sep 2020
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
Passivating contacts for silicon solar cells can be fabricated by depositing a layer of intrinsic amorphous silicon (a-Si) by the plasma-enhanced chemical vapor deposition (PECVD) onto an oxidized silicon wafer, followed by a thermal POCl 3 diffusion process. This article describes the influence of the main PECVD parameters, power and pressure, on the electrical performance of such phosphorus-doped polysilicon (doped-Si/SiO x ) passivating contacts. We characterize their properties in terms of the passivation quality and carrier selectivity for different PECVD powers and pressures. The deposition power settings from 350 to 800 W are tried, the highest iV oc value of 721 mV is achieved at a power of 500 W. The higher deposition powers (≥650 W) lead to blistering issues and possible interface damage, while a lower deposition power (350 W) leads to incomplete decomposition of the precursor gas, resulting in a lower passivation quality. Meanwhile, the power has a marginal impact on the contact resistivity. On the other hand, the deposition pressure has only a slight impact on the passivation quality, while significant changes are observed on the contact resistivity. A lower pressure (0.1 mbar) leads to a higher contact resistivity, while the low and consistent contact resistivity values of 5.8 mΩ·cm 2 are obtained at the pressures above 0.2 mbar.
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Details
- Title
- Influence of PECVD Deposition Power and Pressure on Phosphorus-Doped Polysilicon Passivating Contacts
- Creators
- Wenhao Chen - Nanchang UniversityJosua Stuckelberger - University of CanberraWenjie Wang - University of CanberraSieu Pheng Phang - University of CanberraDi Kang - University of CanberraChristian Samundsett - University of CanberraDaniel MacDonald - University of CanberraAndres Cuevas - University of CanberraLang Zhou - Nanchang UniversityYimao Wan - University of CanberraDi Yan - University of Canberra
- Publication Details
- IEEE journal of photovoltaics, v 10(5), pp 1239-1245
- Publisher
- IEEE
- Grant note
- Nanchang University (10.13039/501100004637) Australian Centre for Advanced Photovoltaics (10.13039/100012030) Australian Renewable Energy Agency (10.13039/501100005105)
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- School of Biomedical Engineering, Science, and Health Systems
- Web of Science ID
- WOS:000562057700005
- Scopus ID
- 2-s2.0-85090133560
- Other Identifier
- 991019320610504721
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- Collaboration types
- Domestic collaboration
- International collaboration
- Web of Science research areas
- Energy & Fuels
- Materials Science, Multidisciplinary
- Physics, Applied