Intermediate temperature molecular beam‐epitaxy growth for design of large‐area metal‐semiconductor‐metal photodetectors

Journal article

Peer reviewed

Bahram Nabet, Arthur Paolella, Paul Cooke, Mary L. Lemuene, Robert P. Moerkirk and Liann‐Chern Liou

Applied physics letters, v 64(23), pp 3151-3153

06 Jun 1994

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Title: Intermediate temperature molecular beam‐epitaxy growth for design of large‐area metal‐semiconductor‐metal photodetectors
Creators: Bahram Nabet
Arthur Paolella
Paul Cooke
Mary L. Lemuene
Robert P. Moerkirk
Liann‐Chern Liou
Publication Details: Applied physics letters, v 64(23), pp 3151-3153
Publisher: American Institute of Physics (AIP)
Resource Type: Journal article
Language: English
Academic Unit: Electrical and Computer Engineering
Web of Science ID: WOS:A1994NP75200030
Scopus ID: 2-s2.0-0028766505
Other Identifier: 991019173527104721

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