Journal article
Interpretation of transient currents in amorphous silicon hydride p-i-n and n-i-n devices
IEEE transactions on electron devices, v 36(12), pp 2785-2788
1989
Abstract
Transient current experiments on amorphous silicon hydride p-i-n and n-i-n devices were performed by M. Silver et al. (1986) as a means of studying the effects of localized states on charge transport in this material. However, some of the features of the observed current transients were not thoroughly understood. Here, simulations of these experiments are used to explain the experimental results and evaluate the parameter set used in the simulation.
Metrics
Details
- Title
- Interpretation of transient currents in amorphous silicon hydride p-i-n and n-i-n devices
- Creators
- F. R Shapiro - Drexel UniversityYaneer Bar-Yam - Weizmann Institute of ScienceM Silver - University of North Carolina at Chapel Hill
- Publication Details
- IEEE transactions on electron devices, v 36(12), pp 2785-2788
- Publisher
- Institute of Electrical and Electronics Engineers
- Number of pages
- 4
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Engineering Technology
- Web of Science ID
- WOS:A1989CH52800007
- Scopus ID
- 2-s2.0-0024913615
- Other Identifier
- 991019173687204721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Collaboration types
- Domestic collaboration
- International collaboration
- Web of Science research areas
- Engineering, Electrical & Electronic
- Physics, Applied