Journal article
Investigating the effect of aluminum oxide fixed charge on Schottky barrier height in molybdenum oxide-based selective contacts
Solar energy materials and solar cells, v 262, 112537
15 Oct 2023
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
A tunneling atomic layer deposited (ALD) AlOx layer was inserted in a Si|SiOx|AlOx|MoOx|metal tunnel diode structure to investigate the impact of fixed interface charge on Schottky barrier height. ALD AlOx provides a synthesis-tunable fixed charge and can provide excellent field effect passivation at the SiOx|AlOx interface. A large (>1 × 1012 q.cm−2) negative fixed charge density was expected to decrease Schottky barrier height on p-type silicon and increase Schottky barrier height on n-type silicon by up to 0.4 eV based on an electrostatic model. Fixed charge density and interface trap state density were measured using a thick layer of AlOx in metal oxide semiconductor capacitor structures (MOSCAPs); Schottky barrier height and specific contact resistivity were measured using a tunneling-active layer of AlOx in contacted structures with MoOx. In some samples, HfOx interface layers were inserted between AlOx and silicon to quench the fixed negative charge. The Schottky barrier height was found to vary with processing conditions but did not have a strong correlation with expected fixed charge density. Thus, while fixed charge may play a role in determining the Schottky barrier height, other parameters also have significant affect. Further work is needed to minimize contact resistivity and elucidate other factors impacting the Schottky barrier height.
•Effect of SiOx.|ALD AlOx fixed charge on ALD MoOx-based selective contact studied with varied processing.•Schottky barrier height found not to vary solely with Nf; other factors contribute to changes.•Schottky barrier height and fixed charge density affected by silicon surface preparation, AlOx deposition temperature, annealing, and the insertion of ALD HfOx at the SiOx.|AlOx interface.•Achieved Schottky barrier height range between <0.2 eV and 1.0 eV with p-type and n-type Si.|SiOx|AlOx|MoOx|Al structures.•Contact resistivity shown indicated to be highly dependent on SiOx layer and/or total oxide thickness.
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Details
- Title
- Investigating the effect of aluminum oxide fixed charge on Schottky barrier height in molybdenum oxide-based selective contacts
- Creators
- Ben M. Garland - Lehigh UniversityBenjamin E. Davis - Lehigh UniversityNicholas C. Strandwitz - Lehigh University
- Publication Details
- Solar energy materials and solar cells, v 262, 112537
- Publisher
- Elsevier
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- A.J. Drexel Nanomaterials Institute
- Web of Science ID
- WOS:001083304600001
- Scopus ID
- 2-s2.0-85170576048
- Other Identifier
- 991021881506404721
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InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Energy & Fuels
- Materials Science, Multidisciplinary
- Physics, Applied