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Isothermal Oxidation of Ti3Al0.6Ga0.4C2 MAX Phase Solid Solution in Air at 1000 degrees C to 1300 degrees C
Journal article   Open access

Isothermal Oxidation of Ti3Al0.6Ga0.4C2 MAX Phase Solid Solution in Air at 1000 degrees C to 1300 degrees C

Tarek A. ElMeligy, Enrica Epifano, Maxim Sokol, Gilles Hug, Marcus Hans, Jochen M. Schneider and Michel W. Barsoum
Journal of the Electrochemical Society, v 169(3)
01 Mar 2022
DOI: https://doi.org/10.1149/1945-7111/ac58c1
url
https://doi.org/10.1149/1945-7111/ac58c1View
Accepted (AM)Open Access (Publisher-Specific),  Open

Abstract

Electrochemistry Materials Science Materials Science, Coatings & Films Physical Sciences Science & Technology Technology
The atomically laminated Ti2AlC, Ti3AlC2 and Cr2AlC MAX phases, with A = Al, form adherent, passivating alpha-alumina, Al2O3, oxide scales when heated in air. The effect of solid solutions on the A layers in affecting the oxidation kinetics remains a subject of open research. Herein we synthesize a dense bulk polycrystalline Ti3Al1-xGaxC2 (x approximate to 0.4) solid-solution and investigate its isothermal oxidation in ambient air, in the 1000 degrees C-1300 degrees C temperature range, for times varying between 15 and 300 h. At 1000 degrees C, a passivating dense Al2O3 layer ( approximate to 1-2.6 mu m thick) with near cubic kinetics and an overall weight gain that is slightly less than either Ti3AlC2 or Ti2AlC is formed. At 1200 degrees C, the Al2O3 layer thickens (3.5-12 mu m thick) with some scale delamination on the corners initiating at 15 h. At 1300 degrees C, the Al2O3 layer (7.6-20.7 mu m thick) wrinkles and Al2TiO5 forms. Though the Al2O3 grains coarsen at 1200 degrees C and 1300 degrees C, the weight gain is higher than that for Ti3AlC2 or Ti2AlC. At around 7 at. %, this is one of the lowest, if not lowest, Al mole fraction in a Ti-based alloy/compound that forms an Al2O3 passivating layer. We further provide compelling microstructural evidence, in the form of a duplex oxide, that at 1000 degrees C, the outward Al flux, J(Al), and the inward O flux, J(O), are related such that 2 J(Al) = 3 J(O). A fraction of these fluxes combine, at the duplex oxide interface, to nucleate small grains

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Electrochemistry
Materials Science, Coatings & Films
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