K/GaAs(110) interface : initial stages of growth and the semiconductor-to-metal transition

Journal article

C. A Ventrice and N. J Dinardo

Physical review. B, Condensed matter, v 47(11), pp 6470-6479

1993

PMID: 10004615

Additional Links

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures

Exact sciences and technology

Physics

Surface and interface electron states

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14 citations in Scopus

Title: K/GaAs(110) interface : initial stages of growth and the semiconductor-to-metal transition
Creators: C. A Ventrice - Drexel University
N. J Dinardo - Drexel University
Publication Details: Physical review. B, Condensed matter, v 47(11), pp 6470-6479
Publisher: American Physical Society
Resource Type: Journal article
Language: English
Academic Unit: Physics
Web of Science ID: WOS:A1993KT88200035
Scopus ID: 2-s2.0-0000627799
Other Identifier: 991019173658404721

Data related to this publication, from InCites Benchmarking & Analytics tool:

Web of Science research areas: Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter