Journal article
Large-grain (>1-mm), recrystallized germanium films on alumina, fused silica, oxide-coated silicon substrates for III–V solar cell applications
Journal of crystal growth, v 250(1), pp 50-56
01 Mar 2003
Abstract
Recrystallized germanium films on ceramics and other materials can serve as a low-cost replacement for the single-crystal germanium wafers currently used for high-efficiency III–V semiconductor solar cells. Related work implies that Ge films with large-grain sizes (>1
mm) formed on thermal-expansion matched substrates, such as sintered alumina ceramic, would function as suitable alternative substrates for epitaxy of high-performance GaAs-based solar cells. For this purpose, we describe a process wherein Ge layers, 0.5–5
μm thick, are deposited by close-spaced vapor transport or sputtering on sintered alumina ceramics, fused silica, or thermally oxidized polysilicon substrates, capped with metal layers deposited by electron-beam evaporation, and recrystallized in an annealing step. Post-growth, the metal cap is stripped with a selective liquid etchant. Recrystallized Ge films have large (1–5
mm) grains and highly oriented textures. These structures provide suitable substrates for epitaxy of GaAs solar cells.
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Details
- Title
- Large-grain (>1-mm), recrystallized germanium films on alumina, fused silica, oxide-coated silicon substrates for III–V solar cell applications
- Creators
- Michael G. MaukJeremy R. Balliet - AstroPower Inc., Solar Park, Newark, DE 19716-2000, USABryan W. Feyock - AstroPower Inc., Solar Park, Newark, DE 19716-2000, USA
- Publication Details
- Journal of crystal growth, v 250(1), pp 50-56
- Publisher
- Elsevier
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Engineering Leadership and Society/Engineering Technology
- Web of Science ID
- WOS:000181373100010
- Scopus ID
- 2-s2.0-0037370275
- Other Identifier
- 991020623759004721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Crystallography
- Materials Science, Multidisciplinary
- Physics, Applied