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Low-temperature grown GaAs heterojunction metal-semiconductor-metal photodetectors improve speed and efficiency
Journal article   Peer reviewed

Low-temperature grown GaAs heterojunction metal-semiconductor-metal photodetectors improve speed and efficiency

Marc Currie, Fabio Quaranta, Adriano Cola, Eric M. Gallo and Bahram Nabet
Applied physics letters, v 99(20), pp 203502-203502-3
14 Nov 2011

Abstract

Physical Sciences Physics Physics, Applied Science & Technology
Low-temperature-grown GaAs (LT-GaAs) has a picosecond recombination lifetime, making a fast photodetector material but limiting carrier mobility and collection efficiency. Here, a metal-semiconductor-metal photodetector with a thin channel of regular-temperature GaAs (RT-GaAs) above LT-GaAs provides fast transit between contacts. A p-type delta doping layer below these layers produces a vertical electric field forcing optically generated electrons towards the channel. The AlGaAs/RT-GaAs heterojunction increases Schottky contacts, and the resulting 8-22 mu m pitch photodetectors have low (< 1-nA) dark current, 12-ps (oscilloscope-limited) pulsewidth, and 0.15-A/W responsivity. The devices demonstrate that fast LT-GaAs pulses are achievable with responsivity similar to RT-GaAs. (C) 2011 American Institute of Physics. [doi:10.1063/1.3662392]

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Physics, Applied
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