Journal article
Mechanical properties of a-C:H and a-C:H/SiO x nanocomposite thin films prepared by ion-assisted plasma-enhanced chemical vapor deposition
Thin solid films, v 280(1)
1996
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Abstract
a-C:H and a-C:H/SiO
x
nanocomposite thin films were deposited on silicon, aluminum and polyimide substrates at 25 °C in an asymmetric 13.56 MHz r.f.-driven plasma reactor under heavy ion bombardment. Fourier transform infrared spectra of the films indicate that the nanocomposite filmsappears to consist of an atomic scale random network of a-C:H and SiO
x
. Raman spectroscopy revealed that the sp
2 carbon fraction in the nanocomposite film was reduced compared with the a-C:H film. The intrinsic stress of both films increased with increasing negative bias voltage (−
V
dc) at the substrate. However, the nanocomposite films exhibited lower intrinsic stress compared w with a-C:H-only films. Especially, a thin SiO
x
-rich interlayer was very effective in reducing the film stress and enhancing the bonding strength at the interface. The interlayer allowed deposition of thick films of up to 5 μm. Also, the nanocomposite films were stable in 0.1 M NaOH solution and showed good microhardness.
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Details
- Title
- Mechanical properties of a-C:H and a-C:H/SiO x nanocomposite thin films prepared by ion-assisted plasma-enhanced chemical vapor deposition
- Creators
- Jung H. Lee - Drexel UniversityDong S. Kim - Drexel UniversityYoung H. Lee - Drexel UniversityBakhtier Farouk - Drexel University
- Publication Details
- Thin solid films, v 280(1)
- Publisher
- Elsevier
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Mechanical Engineering and Mechanics
- Web of Science ID
- WOS:A1996VD94000036
- Scopus ID
- 2-s2.0-0030193649
- Other Identifier
- 991019169711604721
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InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Materials Science, Coatings & Films
- Materials Science, Multidisciplinary
- Physics, Applied
- Physics, Condensed Matter