Journal article
Metal-induced states on the GaAs(110) surface probed by angle-resolved photoemission spectroscopy
Applied surface science, v 48(C), pp 260-263
1991
Abstract
We have used the technique of angle-resolved photoemission with a synchrotron radiation source to probe the electronic states of the metal-semiconductor overlayer systems of K, Cs, and Bi deposited on the GaAs(110) surface. In all cases, we observe changes in the electronic states of the clean surface along with the detection of new metal-induced features.
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Details
- Title
- Metal-induced states on the GaAs(110) surface probed by angle-resolved photoemission spectroscopy
- Creators
- D. Heskett - University of Rhode IslandD. Tang - University of Rhode IslandA.B. McLean - IBM Research - Thomas J. Watson Research CenterR. Ludeke - IBM Research - Thomas J. Watson Research CenterM. Prietsch - IBM Research - Thomas J. Watson Research CenterT. Maeda Wong - Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, USAE.W. Plummer - University of PennsylvaniaN.J. DiNardo - Drexel University
- Publication Details
- Applied surface science, v 48(C), pp 260-263
- Publisher
- Elsevier
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Physics
- Web of Science ID
- WOS:A1991FT44200043
- Scopus ID
- 2-s2.0-0026154694
- Other Identifier
- 991019173811004721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Collaboration types
- Industry collaboration
- Domestic collaboration
- International collaboration
- Web of Science research areas
- Chemistry, Physical
- Materials Science, Coatings & Films
- Physics, Applied
- Physics, Condensed Matter