Journal article
Modeling of Reverse Bias Differential Charge Experiments in Amorphous Silicon
MRS proceedings, v 336, pp 407-412
1994
Abstract
An analytic model is developed for differential charge measurements which avoids the use of the depletion approximation. In this experiment the incremental charge in the device is calculated as the difference between the total steady-state junction charge at two nearly equal voltages, similar to a very low frequency capacitance Measurement. All of the calculations, including an iteration to find the bulk Fermi level, can easily be performed using a spreadsheet program on a personal computer. It is shown that the results of these calculations agree extremely well with simulations performed with a complete numerical device simulator. Thus, the model useful for the analysis of experimental data
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Details
- Title
- Modeling of Reverse Bias Differential Charge Experiments in Amorphous Silicon
- Creators
- Finley R. Shapiro - Drexel University
- Contributors
- Michael Hack (Editor)Arun Madan (Editor)Akihisa Matsuda (Editor)Martin Powell (Editor)Eric A. Schiff (Editor)
- Publication Details
- MRS proceedings, v 336, pp 407-412
- Publisher
- Cambridge University Press
- Number of pages
- 6
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Engineering Technology
- Web of Science ID
- WOS:A1994BC30G00064
- Scopus ID
- 2-s2.0-84897710504
- Other Identifier
- 991019173741804721
InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Engineering, Electrical & Electronic
- Materials Science, Coatings & Films
- Physics, Condensed Matter