Journal article
Modeling the GaAs MESFET's response to modulated light at radio and microwave frequencies
IEEE transactions on microwave theory and techniques, v 42(7), pp 1122-1130
01 Jul 1994
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
The present extension of an earlier model of a MSEFET device's use as an optically sensitive microwave element on MMICs, under steady illumination, includes sinusoidally modulated illumination up to the microwave range. The model gives attention to the dependence of response on bias conditions, wavelength, intensity, and optical input intensity and modulation frequency. The critical role of the internal photovoltaic effect is noted, and validating experimental results are adduced. (AIAA)
Metrics
Details
- Title
- Modeling the GaAs MESFET's response to modulated light at radio and microwave frequencies
- Creators
- Arthur Paolella - United States Department of the ArmyAsher Madjar - Drexel UniversityPeter Herczfeld - Drexel University
- Publication Details
- IEEE transactions on microwave theory and techniques, v 42(7), pp 1122-1130
- Publisher
- The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- [Retired Faculty]
- Web of Science ID
- WOS:A1994NZ27800003
- Scopus ID
- 2-s2.0-0028466814
- Other Identifier
- 991019173850804721
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InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Engineering, Electrical & Electronic