Modeling the electrical characteristics of Schottky contacts in low-dimensional heterostructure devices

Journal article

Peer reviewed

Regiane Ragi, Murilo ARAUJO ROMERO and Bahram Nabet

IEEE transactions on electron devices, v 52(2), pp 170-175

2005

Additional Links

Applied sciences

Compound structure devices

Electronics

Exact sciences and technology

Interfaces

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

9 Record Views

5 citations in Scopus

Title: Modeling the electrical characteristics of Schottky contacts in low-dimensional heterostructure devices
Creators: Regiane Ragi - Universidade de São Paulo
Murilo ARAUJO ROMERO - Department of Electrical Engineering, University of São Paulo, Sao Carlos, SP 13564-250, Brazil
Bahram Nabet - Drexel University
Publication Details: IEEE transactions on electron devices, v 52(2), pp 170-175
Publisher: Institute of Electrical and Electronics Engineers
Resource Type: Journal article
Language: English
Academic Unit: Electrical and Computer Engineering
Web of Science ID: WOS:000226481900006
Scopus ID: 2-s2.0-13344286022
Other Identifier: 991019169147204721

This publication has contributed to the advancement of the following goals:

Data related to this publication, from InCites Benchmarking & Analytics tool:

Collaboration types: Domestic collaboration; International collaboration
Web of Science research areas: Engineering, Electrical & Electronic; Physics, Applied