Journal article
Models for the Temperature and Gas Partial Pressure Dependence of Conductance
Reviews in theoretical science, v 4(2)
01 Jun 2016
Abstract
Several models are in common use for the description of the thermal and gas partial pressure dependence of conductance of semiconducting materials. Herein these models are reviewed, including their physical origins and mathematical forms. The models can be divided into three main categories: models based on the Arrhenius equation, models based on power laws, and miscellaneous expressions. In general, the Arrhenius form is used to describe the thermal dependence of conductance where the activation energy arises from the Schottky barrier, band gap, or a combination of the two. Power laws are typically used to describe the gas partial pressure dependence of conductance and have their physical origin in classical reaction kinetics. Despite their simplicity, the Arrhenius equation and power laws have been used successfully to model conductance for a wide range of semiconducting materials. Other models have their own advantages and are here are collected under miscellanea.
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Details
- Title
- Models for the Temperature and Gas Partial Pressure Dependence of Conductance
- Creators
- Robert B. Wexler - Drexel Univ, Dept Chem, Philadelphia, PA 19104 USAKarl Sohlberg - Drexel Univ, Dept Chem, Philadelphia, PA 19104 USA
- Publication Details
- Reviews in theoretical science, v 4(2)
- Publisher
- Amer Scientific Publishers
- Number of pages
- 15
- Grant note
- Steinbright Career Development Center
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Chemistry
- Web of Science ID
- WOS:000383260600001
- Other Identifier
- 991019168361404721
InCites Highlights
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- Web of Science research areas
- Chemistry, Physical