- Title
- Molecular dynamics simulations of Si etching with energetic F+: Sensitivity of results to the interatomic potential
- Creators
- Cameron F AbramsDavid B Graves
- Publication Details
- Journal of applied physics, v 88(6), pp 3734-3738
- Publisher
- American Institute of Physics (AIP)
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Chemical and Biological Engineering
- Web of Science ID
- WOS:000089034700090
- Scopus ID
- 2-s2.0-0005724485
- Other Identifier
- 991014969884104721
Journal article
Molecular dynamics simulations of Si etching with energetic F+: Sensitivity of results to the interatomic potential
Journal of applied physics, v 88(6), pp 3734-3738
15 Sep 2000
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- Web of Science research areas
- Physics, Applied